In a recent paper [F. Szmulowicz and F. L. Madarasz, J. Appl. Phys. 62, 2533 (1987)] we introduced details of an analytical model for a top side illuminated blocked impurity band infrared detector operating under background limited conditions (BLIP). In the present paper we extend that model to a bottom side illuminated detector operating in the presence of thermally generated carriers (non‐BLIP case) as well as the optically generated background carriers. We display results of a parametric study including gain, quantum efficiency, the excess noise factor, and hence the detector figures of merit responsivity and detectivity, as functions of the detector temperature. Our study of the thermal noise includes the Poole–Frenkel effect. The results of the present calculation determine optimal operating temperatures as well as bias voltages. We show that Si:As blocked impurity band detectors, doped to 5×1017 cm−3, will be background limited below 13.5 K at low background, 1010 photons cm−2 s−1 operation, with re...
[1]
Frank L. Madarasz,et al.
Blocked impurity band detectors—an analytical model: Figures of merit
,
1987
.
[2]
N. Sclar.
Asymmetries in photoconductive properties of donor and acceptor impurities in silicon
,
1984
.
[3]
Karl Hess,et al.
Electric field enhanced emission from non‐Coulombic traps in semiconductors
,
1981
.
[4]
H. Grubin.
The physics of semiconductor devices
,
1979,
IEEE Journal of Quantum Electronics.
[5]
N. Sclar.
Extrinsic silicon detectors for 3–5 and 8–14 μm
,
1976
.
[6]
J. Frenkel,et al.
On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
,
1938
.