100 W L-band GaAs power FP-HFET operated at 30 V
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K. Matsunaga | Masaaki Kuzuhara | I. Takenaka | K. Asano | K. Ishikura | Naotaka Iwata | M. Kanamori | N. Sakura
[1] M. Kanamori,et al. A 50 W low distortion GaAs MESFET for digital cellular base stations , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.