Tunable bandgap in graphene by the controlled adsorption of water molecules.

Graphene, a single-atom-thick layer of sp 2 -hybridized carbon atoms, has generated considerable excitement in the scientifi c community due to its peculiar electronic band structure, which leads to unusual phenomena such as the anomalous quantum Hall effect, [ 1,2 ] spin-resolved quantum interference, [ 3 ] ballistic electron transport, [ 4 ] and bipolar supercurrent. [ 5 ] However, pristine graphene is a semimetal with zero bandgap; the local density of states at the Fermi level is zero and conduction can only occur by the thermal excitation of electrons. [ 2 ] This lack of an electronic bandgap is the major obstacle limiting the utilization of graphene in nano-electronic and -photonic devices, [ 6,7 ] such as p–n junctions, transistors, photodiodes, and lasers. The graphene band structure is sensitive to lattice symmetry and several methods have been developed to break this symmetry and open an energy gap. These methods are based on a variety of techniques, such as defect generation, [ 8 ] doping (e.g., with potassium [ 9 ] ), applied bias, [ 10–12 ] and interaction with gases [ 13 ] (e.g., nitrogen dioxide). For instance, in reference [ 12 ] a tunable bandgap of up to 0.25 eV was achieved for electrically gated bilayer graphene by a variable external electric fi eld. Similarly, an internal electric fi eld produced by an imbalance of doped charge between two graphene layers has been shown to open a bandgap. [ 9 ] It has been demonstrated that a gap of ≈ 0.26 eV can be produced by growing graphene epitaxially on silicon carbide substrates. [ 14 ] This gap originated from the breaking of sublattice symmetry due to the graphene–substrate interaction. Patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene [ 15 ] has resulted in a bandgap of ≈ 0.73 eV opening, while half-hydrogenated graphene [ 16 ] resulted in a bandgap of ≈ 0.43 eV. A graphene nanomesh structure [ 17 ] has also been shown to exhibit a bandgap. In this graphene structure, lateral quantum confi nement and localization effects due to