High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation

Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs–GaAs–InGaAs–InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strained-layer InGaAs quantum wells (QWs) to the single InAs QD layer to assist carrier collection and thermalization. A QW-assisted single-layer InAs QD laser, a QD+QW laser, is demonstrated that operates cw (300 K), and at diode length 150 μm in pulsed operation exhibits gain as high as ∼100 cm−1.

[1]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .

[2]  Russell D. Dupuis,et al.  Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures , 2001 .

[3]  Shun Lien Chuang,et al.  Efficient quantum well to quantum dot tunneling: Analytical solutions , 2002 .

[4]  A. R. Sugg,et al.  Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser , 1993 .

[5]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[6]  Russell D. Dupuis,et al.  Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation , 2001 .

[7]  D. Bimberg,et al.  Quantum-dot heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  R. Dupuis,et al.  III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[9]  Nikolai N. Ledentsov,et al.  Quantum dot heterostructures , 1999 .

[10]  A. R. Sugg,et al.  Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .

[11]  T. Chung,et al.  Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser , 2001 .

[12]  Russell D. Dupuis,et al.  Quantum-well heterostructure lasers , 1980 .