High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation
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T. Chung | Nick Holonyak | N. Holonyak | G. Walter | G. Walter | T. Chung
[1] M. Asada,et al. Gain and the threshold of three-dimensional quantum-box lasers , 1986 .
[2] Russell D. Dupuis,et al. Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures , 2001 .
[3] Shun Lien Chuang,et al. Efficient quantum well to quantum dot tunneling: Analytical solutions , 2002 .
[4] A. R. Sugg,et al. Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser , 1993 .
[5] H. Sakaki,et al. Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .
[6] Russell D. Dupuis,et al. Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation , 2001 .
[7] D. Bimberg,et al. Quantum-dot heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.
[8] R. Dupuis,et al. III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition , 2000, IEEE Journal of Selected Topics in Quantum Electronics.
[9] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .
[10] A. R. Sugg,et al. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .
[11] T. Chung,et al. Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser , 2001 .
[12] Russell D. Dupuis,et al. Quantum-well heterostructure lasers , 1980 .