论文信息 - A new high performance CMOS active inductor

A new high performance CMOS active inductor

A new high-performance active inductor with ability to tune its self-resonance frequency and quality factor without affecting each other is presented in this letter. Using the input transistor of active inductor in cascoding configuration gives this property to designed circuit. Furthermore, the input transistor topology make the device robust in terms of its performance over variation in process and temperature. On the other hand, RC feedback is used to cancel the parasitic components in input node of the active device, which results to improve circuit performance. Schematic and post-layout simulation results shows the theory validity of the design. Monte Carlo and temperature analysis is done to show structure robustness in PVT variation. Inductive behavior frequency range of suggested structure is 0.3-11.4 GHz. Maximum quality factor is obtained as high as 3.7k at 6.3 GHz. Total power consumption is as low as 1mW with 1.8 V power supply.

Metin Yazgi | Ali Naderi Saatlo | Ramazan Köprü | Hadi Ghasemzadeh Momen

[1] Leonardo Pantoli,et al. Class AB tunable active inductor , 2015 .

[2] Yong Lian,et al. 1 V, 0.18 μm-area and power efficient UWB LNA utilising active inductors , 2008 .

[3] Leonardo Pantoli,et al. Single transistor high linearity and wide dynamic range active inductor , 2015, Int. J. Circuit Theory Appl..

[4] Metin Yazgi,et al. A low loss, low voltage and high Q active inductor with multi-regulated cascade stage for RF applications , 2015, 2015 IEEE International Conference on Electronics, Circuits, and Systems (ICECS).

[5] Kenichi Okada,et al. High- $Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits , 2015 .

[6] John Choma,et al. Gyrator-Based Synthesis of Active On-Chip Inductances , 2003 .

[7] W. Bucossi,et al. Practical Considerations In The Use of CMOS Active Inductors , 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[8] Kenichi Okada,et al. High- $Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated Circuits , 2014, IEEE Transactions on Electron Devices.

[9] J. Burghartz,et al. On the design of RF spiral inductors on silicon , 2003 .

[10] G. Szczepkowski,et al. Wideband 0.18μm CMOS VCO using active inductor with negative resistance , 2007, 2007 18th European Conference on Circuit Theory and Design.