BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization
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S. Datta | P. Ye | A. Shakouri | K. Maize | M. Si | R. Agrawal | Zehao Lin | Joseph Andler | D. Zheng | J. Noh | Junkang Li | X. Lyu | S. Alajlouni | Chang Niu | A. Murray