Multiscale simulations of silicon nanoindentation
暂无分享,去创建一个
Noam Bernstein | Efthimios Kaxiras | Ellad B. Tadmor | E. Kaxiras | N. Bernstein | G. Smith | E. Tadmor | G. S. Smith
[1] A. K. Bhattacharya,et al. Finite element simulation of indentation experiments , 1988 .
[2] K. Nickel,et al. Phase transformations of silicon caused by contact loading , 1997 .
[3] H. Balamane,et al. Comparative study of silicon empirical interatomic potentials. , 1992, Physical review. B, Condensed matter.
[4] Kroll,et al. Amorphization and conductivity of silicon and germanium induced by indentation. , 1988, Physical review letters.
[5] Noam Bernstein,et al. Mixed finite element and atomistic formulation for complex crystals , 1999 .
[6] Warren C. Oliver,et al. Characterizing the hardness and modulus of thin films using a mechanical properties microprobe , 1988 .
[7] T. Arias,et al. Iterative minimization techniques for ab initio total energy calculations: molecular dynamics and co , 1992 .
[8] R. Holm. Electric contacts; theory and application , 1967 .
[9] M. Swain,et al. Influence of spherical indentor radius on the indentation-induced transformation behaviour of silicon , 1995 .
[10] Noam Bernstein,et al. Nonorthogonal tight-binding Hamiltonians for defects and interfaces in silicon , 1997 .
[11] R. O. Jones,et al. The density functional formalism, its applications and prospects , 1989 .
[12] Weber,et al. Computer simulation of local order in condensed phases of silicon. , 1985, Physical review. B, Condensed matter.
[13] V. I. Trefilov,et al. Phase transition in diamond‐structure crystals during hardness measurements , 1972 .
[14] David R. Clarke,et al. Electrical resistance of metallic contacts on silicon and germanium during indentation , 1992 .
[15] M. Ortiz,et al. Quasicontinuum analysis of defects in solids , 1996 .
[16] Wooten,et al. Molecular dynamics of silicon indentation. , 1993, Physical review. B, Condensed matter.
[17] George M. Pharr,et al. New evidence for a pressure-induced phase transformation during the indentation of silicon , 1991 .
[18] J. C. Hamilton,et al. Dislocation nucleation and defect structure during surface indentation , 1998 .
[19] Smith,et al. Multiscale simulation of loading and electrical resistance in silicon nanoindentation , 2000, Physical review letters.
[20] Jens Lothe John Price Hirth,et al. Theory of Dislocations , 1968 .
[21] J. Pethica,et al. Size-dependent phase transformations during point loading of silicon , 2000 .
[22] Bharat Bhushan,et al. Micro/Nanomechanical Characterization of Ceramic Films for Microdevices , 1999 .
[23] Simpson,et al. First principles simulations of silicon nanoindentation. , 1995, Physical review letters.
[24] David M. Follstaedt,et al. Finite-element modeling of nanoindentation , 1999 .
[25] Michael V. Swain,et al. Observation, analysis, and simulation of the hysteresis of silicon using ultra-micro-indentation with spherical indenters , 1993 .
[26] M. Swain,et al. Ultra-micro-indentation of silicon and compound semiconductors with spherical indenters , 1999 .