Recent and Future IGBT Evolution
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IGBT module has many variations in order to find out an optimum saddle point on a triangle trade-off relationship among low loss, fast switching and robustness. One of the best solution, especially for automotive application, which requires the perfect safety, is the IPM with a protection circuit built-in inside of power module. In IPM, low loss characteristics could be achieved by the advanced IGBT structure like a CSTBT. Not only individual technology advance for both Silicon chip and package, but also chip-package interconnections are extremely important to achieve the best performance as a power module.
[1] B. J. Baliga,et al. Enhancement- and depletion-mode vertical-channel m.o.s. gated thyristors , 1979 .
[2] H.-R. Chang,et al. 500-V n-channel insulated-gate bipolar transistor with a trench gate structure , 1989 .
[3] Electronics Letters , 1965, Nature.
[4] G. Majumdar. Power Modules As Key Component Group For Power Electronics , 2007, 2007 Power Conversion Conference - Nagoya.