Mixed-Mode Circuit Simulation with Full-Wave Analysis of Interconnections

A simulation technique, which couples full-wave, electro-magnetic simulation of interconnections and distributed semiconductor device modeling, is described in this paper. A 3D FDTD scheme is adopted to describe the circuit passive part, whereas conventional device simulation techniques are employed for the active semiconductor devices. The resulting scheme allows for accurate mixed-mode simulation, inherently accounting for propagation and radiative effects. An application example is discussed, consisting of the simulation of a Si-MMIC RF switch.

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