Unfolding the Threshold Switching Behavior of a Memristor

Employing a mathematical model based upon Chua’s unfolding theorem, some aspects of the nonlinear dynamics of a thermally-activated micro-scale NbO x /Nb 2 O 5 volatile memristor were modeled. Insights into the peculiar behavior of the device are gained through experiments and model-based simulations. Particularly, this enables us to reproduce its threshold switching behavior under quasi-static excitation, and to explain under which conditions the off-to-on switching is accompanied by the appearance of a negative differential resistance region on its current-voltage characteristic.

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