Comparison of MOS capacitor and transistor postirradiation response
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Daniel M. Fleetwood | P. J. McWhorter | R. A. Pastorek | D. Fleetwood | P. McWhorter | R. Pastorek | G. T. Zimmerman | G. Zimmerman
[1] Tso-Ping Ma,et al. Comparison of interface-state generation by 25-keV electron beam irradiation in p-type and n-type MOS capacitors , 1975 .
[2] C. Barnes,et al. The application of deep level transient spectroscopy to the measurement of radiation-induced interface state spectra , 1988 .
[3] L. Terman. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes , 1962 .
[4] J. R. Schwank,et al. Using a 10-keV X-Ray Source for Hardness Assurance , 1986, IEEE Transactions on Nuclear Science.
[5] Y. Nishioka,et al. Time-dependent evolution of interface traps in hot-electron damaged metal/SiO2/Si capacitors , 1987, IEEE Electron Device Letters.
[6] P. S. Winokur,et al. Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.
[7] P. Winokur,et al. Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors , 1986 .
[8] P. V. Dressendorfer,et al. A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors , 1987, IEEE Transactions on Nuclear Science.
[9] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[10] C. N. Berglund. Surface states at steam-grown silicon-silicon dioxide interfaces , 1966 .
[11] H. L. Hughes,et al. Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon , 1988 .
[12] J. Plummer,et al. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces , 1980 .
[13] Patrick M. Lenahan,et al. Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .
[14] James R. Schwank,et al. Correlation of Radiation Effects in Transistors and Integrated Circuits , 1985, IEEE Transactions on Nuclear Science.
[15] R. Castagné,et al. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements , 1971 .