Reliability study of wafer bonding for micro-electro-mechanical systems

Wafer bonding has attracted significant attention in applications that require integration of Micro-Electro-Mechanical Systems (MEMS) with Integrated Circuits (IC). The integration of monolithic MEMS and electronic devices is difficult because of issues such as material compatibility, process compliance and thermal budget. It is important to establish a wafer bonding process which provides long-term protection for the MEMS devices yet does not affect their performance. The attentions for such integration are at the die level and wafer level. Recently, the trend is toward wafer-level integration as a cost effective solution to combine sensing, logic, actuation and communications on a single platform. This paper describes the development of low temperature bonding techniques for post-CMOS MEMS integration in system-on-chip (SOC) applications. The bonding methods discussed in this paper involve Benzocyclobutene polymer (BCB) as glue layer to joint two 200 mm wafers together. The bonding temperature is lower than 400°C. Four-point bending and stud-pull methods were used to investigate the mechanical properties of the bonding interfaces. These methods can provide critical information such as adhesion energy and bonding strength of the bonded interfaces. Initial test results at room temperature showed that the BCB bond stayed intact up to an average stress of 50 MPa. It was observed that the BCB bond strength decreased with increasing temperatures and the energy release rate decreased with decreasing BCB thickness.