Very low resistance alloyed Ni-based ohmic contacts to InP-capped and uncapped n+-In0.53 Ga0.47As
暂无分享,去创建一个
Won Hyuck Choi | Michael Abraham | Rinus T. P. Lee | Suzanne E. Mohney | M. Abraham | S. Mohney | Rinus Lee | Shih-Ying Yu | W. Choi | Shih-Ying Yu
[1] Suzanne E. Mohney,et al. Factors controlling the resistance of Ohmic contacts to n-InGaAs , 2012 .
[2] W. M. Kelly,et al. An improved transmission line structure for contact resistivity measurements , 1994 .
[3] C. Rossel,et al. CMOS compatible self-aligned S/D regions for implant-free InGaAs MOSFETs , 2012 .
[4] M. B. Das,et al. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance , 1982 .
[5] Williams,et al. Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfaces. , 1985, Physical review. B, Condensed matter.
[6] M. Ogawa. Alloying reaction in thin nickel films deposited on GaAs , 1980 .
[7] Xiao Gong,et al. A Self-Aligned Ni-InGaAs Contact Technology for InGaAs Channel n-MOSFETs , 2012 .
[8] M. Eizenberg,et al. Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As , 2012 .
[9] Mitsuru Takenaka,et al. Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal?Oxide?Semiconductor Field-Effect Transistors Using Ni?InGaAs Alloy , 2011 .
[10] Xiao Gong,et al. Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts , 2012 .
[11] Mark J. W. Rodwell,et al. Ex situ Ohmic contacts to n-InGaAs , 2010 .
[12] R. Wallace,et al. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As , 2011 .
[13] J. C. Lin,et al. Characterization of low-resistance ohmic contacts to n- and p-type InGaAs , 2013 .
[14] M. Eizenberg,et al. Interfacial reactions between Ni films and GaAs , 1986 .
[15] S. R. Smith,et al. The Effect of Oxygen on Diffusion and Compounding at Ni-GaAs(100) Interfaces , 1985 .
[16] M. Takenaka,et al. High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology , 2013, IEEE Transactions on Electron Devices.
[18] M. Eizenberg,et al. Epitaxial NiInGaAs formed by solid state reaction on In0.53Ga0.47As: Structural and chemical study , 2013 .
[19] I. Mojzes,et al. Influence of finite metal overlayer resistance on the evaluation of contact resistivity , 1986, IEEE Transactions on Electron Devices.
[20] Ivana,et al. Crystal structure and epitaxial relationship of Ni4InGaAs2 films formed on InGaAs by annealing , 2013 .
[21] C. Hsieh,et al. An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS , 2012, IEEE Electron Device Letters.
[22] M. Nicolet,et al. Finite metal-sheet-resistance in contact resistivity measurements: Application to Si/TiN contacts , 1983 .
[23] A. Dimoulas,et al. Source and Drain Contacts for Germanium and III–V FETs for Digital Logic , 2009 .
[24] Dae-Hyun Kim,et al. A Self-Aligned InGaAs HEMT Architecture for Logic Applications , 2009, IEEE Transactions on Electron Devices.