论文信息 - Evolution of the mechanical stress on PECVD silicon oxide films under thermal processing

Evolution of the mechanical stress on PECVD silicon oxide films under thermal processing

O as reactantgases are being extensively studied nowadays. Thisinterest is based on potential uses in microelectronics,integrated optics technology [1, 2] and as a basicmaterial for fundamental studies about the luminescentproperties of silicon-based nanostructures and siliconoxide defect centers [3]. The composition and physicalproperties of these oxides strongly depend on thedeposition parameters, the precursor gas ﬂow ratio,R D[N

Carlos Domínguez | Andreu Llobera | J. A. Rodríguez

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