A physical model for scaling and optimizing layers structure of InGaAs/InP double heterojunction bipolar transistors based on hydrodynamic simulation

Currently the most popular HBTs model are unscalable and cannot be used for device structure optimization which must primarily be calibrated with already fabricated and measured devices. To overcome the problem, a physical model for scaling and optimizing layers structure of InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed in this paper.