论文信息 - Performance of parallel 4×25 Gbs transmitter and receiver fabricated on SOI platform - 字舞流文

Performance of parallel 4×25 Gbs transmitter and receiver fabricated on SOI platform

We demonstrate performance of Ge-Si optical modulator and Ge PD receiver on a SOI platform for the parallel 4×25 Gbs application.

Dazeng Feng | M. Asghari | Shirong Liao | J. Luff | Hong Liang | S. Jatar | Y. Malinge | Zhou Zhou | Zhi Li | C. Bushyakanist | D. C. Lee | R. Shafiiha

[1] Richard A. Soref,et al. Silicon-based optoelectronics , 1993, Proc. IEEE.

[2] B. Jalali,et al. Silicon Photonics , 2006, Journal of Lightwave Technology.

[3] Ying Luo,et al. 30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide. , 2011, Optics express.

[4] N. Feng,et al. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide , 2009 .

[5] Guo-Qiang Lo,et al. Silicon Modulators and Germanium Photodetectors on SOI: Monolithic Integration, Compatibility, and Performance Optimization , 2010, IEEE Journal of Selected Topics in Quantum Electronics.