论文信息 - A generalized theory for determining the field‐enhanced thermal emission rate by the reverse pulsed deep‐level transient spectroscopy

A generalized theory for determining the field‐enhanced thermal emission rate by the reverse pulsed deep‐level transient spectroscopy

A generalized theory for determining the field‐enhanced thermal emission rates and carrier capture cross section of deep‐level defects at very high field and for large trap density by the reverse pulsed deep‐level transient spectroscopy technique has been developed in this paper. Using this new theory the field‐enhanced emission rates for the DX center in a liquid‐phase‐epitaxial grown Sn‐doped Al0.2Ga0.8As were determined for field strength up to 7×105 V/cm.

Shengshi Li | Ghung G. Choi

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