论文信息 - Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]

Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]

The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments, conducted on power DMOS transistors, show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity.

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