Observation of intersubband real-space transfer in GaAs/AlAs quantum-well structures due to Γ–X mixing

The Γ2–Xz1 intersubband dynamics in GaAs/AlAs quantum-well structures is investigated by time-resolved infrared pump and probe experiments. In the studied structure, the second Γ level in GaAs is nearly resonant to the first Xz level in AlAs, resulting in elastic Γ–X scattering. A biexponential behavior of ground-state recovery has been found with a time constant in the order of 1 ps for the Γ2–Γ1 relaxation and a time constant of 7 ps (at 10 K), which represents the Xz–Γ2 transfer.

[1]  C. Becker,et al.  AlAs/GaAs quantum cascade lasers based on large direct conduction band discontinuity , 2000 .

[2]  H. Liu,et al.  Optically pumped intersubband laser: Resonance positions and many-body effects , 2000 .

[3]  A. Andronov,et al.  Giant population inversion of hot electrons in GaAs/AlAs type heterostructures with quantum wells , 1998 .

[4]  Skolnick,et al.  Experimental determination of Gamma -X intervalley transfer mechanisms in GaAs/AlAs heterostructures. , 1996, Physical review. B, Condensed matter.

[5]  I. Bayanov,et al.  Intense subpicosecond pulses tunable between 4 μm and 20 μm generated by an all-solid-state laser system , 1994 .

[6]  Raichev Oe,et al.  Phonon-assisted Gamma -X transfer in (001)-grown GaAs/AlAs superlattices. , 1994 .

[7]  A G Steele,et al.  Low dark current dual band infrared photodetector using thin AlAs barriers and Γ‐X mixed intersubband transition in GaAs quantum wells , 1994 .

[8]  K. Ploog,et al.  Pressure-induced Γ- X electron-transfer rates in a (GaAs ) 15 /(AlAs ) 5 superlattice , 1991 .

[9]  Dawson,et al.  Experimental study of the Gamma -X electron transfer in type-II (Al,Ga)As/AlAs superlattices and multiple-quantum-well structures. , 1990, Physical review. B, Condensed matter.

[10]  Sipe,et al.  Exciton states in type-I and type-II GaAs/Ga1-xAlxAs superlattices. , 1990, Physical review. B, Condensed matter.

[11]  Lu,et al.  Valley-mixing effects in short-period superlattices. , 1989, Physical review. B, Condensed matter.

[12]  H. Liu,et al.  Resonant tunneling through single layer heterostructures , 1987 .

[13]  S. Adachi GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .