A Review of Si MOS-Gated Power Switches and PiN Rectifiers
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[1] H. Takahashi,et al. Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application , 1996, 8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
[2] B. Brunner,et al. 600 V Reverse Conducting (RC-)IGBT for Drives Applications in Ultra-Thin Wafer Technology , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
[3] T. Laska,et al. The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
[4] M. Tack,et al. UltiMOS: A local charge-balanced trench-based 600V super-junction device , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
[5] J. Lutz,et al. Semiconductor Power Devices: Physics, Characteristics, Reliability , 2011 .
[6] V.A.K. Temple. MOS Controlled thyristors (MCT's) , 1984, 1984 International Electron Devices Meeting.
[7] R. van Dalen,et al. Power trench MOSFETs with very low specific on-resistance for 25V applications , 2006, 2006 European Solid-State Device Research Conference.
[8] H.-J. Schulze,et al. Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations , 2008, Microelectron. J..
[9] J. Sack,et al. A new concept for a non punch through IGBT with MOSFET like switching characteristics , 1989, 20th Annual IEEE Power Electronics Specialists Conference.
[10] J. Lutz,et al. A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH) , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.
[11] U. Schlapbach,et al. A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.
[12] H. Egawa,et al. Avalanche characteristics and failure mechanism of high voltage diodes , 1966 .
[13] R. van Dalen,et al. Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
[14] Shuming Xu,et al. NexFET a new power device , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).
[15] Thomas Laska,et al. Ultrathin 400V FS IGBT for HEV applications , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
[16] G. Deboy,et al. A novel trench concept for the fabrication of compensation devices , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[17] J. Tihanyi,et al. A new generation of high voltage MOSFETs breaks the limit line of silicon , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[18] M.S. Shekar,et al. A new MOS-gated power thyristor structure with turn-off achieved by controlling the base resistance , 1991, IEEE Electron Device Letters.
[19] Akio Nakagawa,et al. 30V new fine trench MOSFET with ultra low on-resistance , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[20] Y.C. Liang,et al. Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices , 2001, IEEE Electron Device Letters.
[21] N. Mestres,et al. Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities , 2010 .
[22] U. Schlapbach,et al. New plasma shaping technology for optimal high voltage diode performance , 2007, 2007 European Conference on Power Electronics and Applications.
[23] Masashi Kuwahara,et al. 1200 V trench gate NPT-IGBT (IEGT) with excellent low on-state voltage , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
[24] John F. Donlon,et al. A new punch through IGBT having a new N-buffer layer , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).
[25] Jifa Hao,et al. An ultra dense trench-gated power MOSFET technology using a self-aligned process , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
[27] R. Allan,et al. Power semiconductors , 1975, IEEE Spectrum.
[28] H.-R. Chang,et al. Great improvement in IGBT turn-on characteristics with Trench Oxide PiN Schottky (TOPS) diode , 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).
[29] Friedhelm Dr. Bauer. The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages , 2004 .
[30] B. J. Baliga,et al. The pinch rectifier: A low-forward-drop high-speed power diode , 1984, IEEE Electron Device Letters.
[31] B.J. Baliga. The MOS-gated emitter switched thyristor , 1990, IEEE Electron Device Letters.
[32] M. Rahimo,et al. The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes , 2005, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
[33] Ichiro Omura,et al. Carrier injection enhancement effect of high voltage MOS devices-device physics and design concept , 1997, Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
[34] L. Lorenz,et al. Rated overload Characteristics of IGBTs for low-voltage and high-voltage devices , 2004, IEEE Transactions on Industry Applications.
[35] T. Fujihira. Theory of Semiconductor Superjunction Devices , 1997 .
[36] Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance , 2006 .
[37] Josef Lutz,et al. Dynamic avalanche and reliability of high voltage diodes , 2003, Microelectron. Reliab..
[38] J. Lutz,et al. The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes , 2009, IEEE Transactions on Electron Devices.
[39] T. Laska,et al. A 2000 V non-punchthrough IGBT with high ruggedness , 1992 .
[40] T. Araki. Integration of power devices-next tasks , 2005, 2005 European Conference on Power Electronics and Applications.
[41] M.S. Adler,et al. The insulated gate rectifier (IGR): A new power switching device , 1982, 1982 International Electron Devices Meeting.
[42] J. Rebollo,et al. Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions , 2011, IEEE Transactions on Industrial Electronics.
[43] S. Linder,et al. Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability , 2006, 2006 IEEE International Symposium on Power Semiconductor Devices and IC's.
[44] R. Hueting,et al. RESURF stepped oxide (RSO) MOSFET for 85V having a record-low specific on-resistance , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.
[45] Tae Moon Roh,et al. High-density trench DMOSFETs employing two step trench techniques and trench contact structure , 2003, ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
[46] Marina Antoniou,et al. The Semi-Superjunction IGBT , 2010, IEEE Electron Device Letters.
[47] H. Yamaguchi,et al. 600V-class Super Junction MOSFET with High Aspect Ratio P/N Columns Structure , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.
[48] P. Godignon,et al. The IBMCT: a novel MOS-gated thyristor structure , 1997, IEEE Electron Device Letters.
[49] Michel Mermet-Guyennet,et al. Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems , 2011, IEEE Transactions on Industrial Electronics.
[50] Phil Rutter,et al. Low voltage superjunction power MOSFET: An application optimized technology , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
[51] H. Takahashi,et al. 1200V class reverse blocking IGBT (RB-IGBT) for AC matrix converter , 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.
[52] Yung C. Liang,et al. Theoretical Analyses of Oxide-Bypassed Superjunction Power Metal Oxide Semiconductor Field Effect Transistor Devices , 2005 .