论文信息 - High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry - 字舞流文

High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry

L. Jalabert | F. Carcenac | P. Dubreuil | C. Fontaine | H. Granier | S. Pinaud | L. Salvagnac