Consistent gate and substrate current modeling based on energy transport and the lucky electron concept
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[1] N. Goldsman,et al. Tradeoffs and electron temperature calculations in lightly doped drain structures , 1985, IEEE Electron Device Letters.
[2] Tak H. Ning,et al. Emission probability of hot electrons from silicon into silicon dioxide , 1977 .
[3] E. Kane. Electron Scattering by Pair Production in Silicon , 1967 .
[4] D. F. Nelson,et al. High‐field drift velocity of electrons at the Si–SiO2 interface as determined by a time‐of‐flight technique , 1983 .
[5] R. V. Overstraeten,et al. Measurement of the ionization rates in diffused silicon p-n junctions , 1970 .
[6] W. L. Engl,et al. The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors , 1988 .
[7] N. I. Meyer,et al. Hot-Electron Emission From Shallow p-n Junctions is Silicon , 1963 .
[8] M. Fukuma,et al. MOSFET substrate current model including energy transport , 1987, IEEE Electron Device Letters.