论文信息 - SiH3 Radical Density in Pulsed Silane Plasma

SiH3 Radical Density in Pulsed Silane Plasma

The SiH3 radical density in pulsed silane discharge plasma was measured by infrared diode laser absorption spectroscopy (IRLAS) for three buffer gases and also as functions of the sample pressure and the pulse width. They were compared with the SiH and SiH2 radical densities. The growth rate of a-Si:H thin film was compared with the SiH3 radical density on various plasma conditions. These data were employed to discuss the contribution of SiH3 to a-Si:H thin-film growth.

[1] T. Goto,et al. Diffusion Coefficient and Reaction Rate Constant of the SiH3 Radical in Silane Plasma , 1989 .

[2] J. Perrin,et al. a-Si:H Deposition from SiH4 and Si2H6 rf-Discharges: Pressure and Temperature Dependence of Film Growth in Relation to α-γ Discharge Transition , 1988 .

[3] T. Goto,et al. Measurement of the SiH3 Radical Density in Silane Plasma using Infrared Diode Laser Absorption Spectroscopy , 1988 .

[4] J. Perrin,et al. Production mechanism and reactivity of the SiH radical in a silane plasma , 1984 .