Cesium redeposition artifacts during low energy ToF-SIMS depth profiling
暂无分享,去创建一个
[1] Ehrenfried Zschech,et al. Materials for Information Technology , 2010 .
[2] R. Vitchev,et al. Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling , 2008 .
[3] R. Vitchev,et al. Cesium/xenon co-sputtering at different energies during ToF-SIMS depth profiling , 2008 .
[4] B. Douhard,et al. Molecular depth-profiling of polycarbonate with low-energy Cs+ ions. , 2007, Rapid communications in mass spectrometry : RCM.
[5] Kehui Wu. Unusual diffusivity and clustering of alkali metals on the Si(111)-7x7 surface , 2005 .
[6] H. Bender,et al. ToF-SIMS depth profiling of Hf and Al composition variations in ultrathin mixed HfO2/Al2O3 oxides , 2004 .
[7] J. Rabalais,et al. Computer simulation of the ion beam deposition of binary thin films: Carbon nitride and boron carbide , 1994 .
[8] T. Stephan,et al. Correction of dead time effects in time‐of‐flight mass spectrometry , 1994 .
[9] D. Karpuzov,et al. Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicomponent targets under ion bombardment , 1992 .