Ferromagnetic resonance of perpendicularly magnetized Tm3Fe5O12/Pt heterostructures

Broadband ferromagnetic resonance is used to investigate magnetization dynamics, damping, interfacial spin transport, and perpendicular magnetic anisotropy (PMA) of (111)-oriented epitaxial thin films of the ferrimagnetic insulator Tm3Fe5O12 (TmIG) on substrates of (111)-oriented Gd3Ga5O12. A PMA field of ∼162 mT is found at 350 K, in the temperature range where spin–orbit torque switching was previously reported [Avci et al., Nat. Mater. 16, 309–314 (2017)]. A Lande g-factor of 1.56 strongly supports large intrinsic spin–orbit coupling due to the presence of the heavy rare earth Tm. Gilbert damping coefficients α are compared for three samples: a 28 nm thin TmIG film (α ∼ 0.014), a TmIG (28 nm)/Pt (6 nm) bilayer (α ∼ 0.022), and a TmIG (28 nm)/Cu (3 nm)/Pt (6 nm) trilayer (α ∼ 0.024). Applying the spin pumping formalism, we find that the real part of the effective interfacial spin mixing conductance Geff↑↓ = 5.7 × 1014 Ω−1 m−2 is comparable to that of well-studied garnet/Pt interfaces. Our work strengthens the candidacy of TmIG for spintronics applications requiring PMA in insulating thin films.Broadband ferromagnetic resonance is used to investigate magnetization dynamics, damping, interfacial spin transport, and perpendicular magnetic anisotropy (PMA) of (111)-oriented epitaxial thin films of the ferrimagnetic insulator Tm3Fe5O12 (TmIG) on substrates of (111)-oriented Gd3Ga5O12. A PMA field of ∼162 mT is found at 350 K, in the temperature range where spin–orbit torque switching was previously reported [Avci et al., Nat. Mater. 16, 309–314 (2017)]. A Lande g-factor of 1.56 strongly supports large intrinsic spin–orbit coupling due to the presence of the heavy rare earth Tm. Gilbert damping coefficients α are compared for three samples: a 28 nm thin TmIG film (α ∼ 0.014), a TmIG (28 nm)/Pt (6 nm) bilayer (α ∼ 0.022), and a TmIG (28 nm)/Cu (3 nm)/Pt (6 nm) trilayer (α ∼ 0.024). Applying the spin pumping formalism, we find that the real part of the effective interfacial spin mixing conductance Geff↑↓ = 5.7 × 1014 Ω−1 m−2 is comparable to that of well-studied garnet/Pt interfaces. Our work strengthe...

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