Time-resolved photoluminescence of a triple GaAs quantum well with growth islands under resonant photoexcitation into the ground and excited states
暂无分享,去创建一个
[1] D. Citrin,et al. Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in G a A s / A l x Ga 1 − x As and InGaP 2 / Al x Ga 1 − x As heterostructures , 1999 .
[2] H. Grahn,et al. EXCITONIC PROPERTIES OF WEAKLY COUPLED GAAS SINGLE QUANTUM WELLS INVESTIGATED WITH HIGH-RESOLUTION PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY , 1997 .
[3] K. Ploog,et al. Dynamical Stokes shift due to interface nanoroughness in growth islands of GaAs single quantum wells , 1997 .
[4] Shah,et al. Efficient exciton energy transfer between widely separated quantum wells at low temperatures. , 1996, Physical review. B, Condensed matter.
[5] R. Hey,et al. Influence of growth related thickness fluctuations on the spectral and lateral luminescence intensity distribution in GaAs quantum wells , 1995 .
[6] Kuhl,et al. Density-dependent exciton radiative lifetimes in GaAs quantum wells. , 1992, Physical review. B, Condensed matter.
[7] Ploog,et al. Dynamics of inter- and intra-growth-island exciton localization in GaAs single quantum wells. , 1991, Physical review. B, Condensed matter.
[8] Dawson,et al. Linewidth dependence of radiative exciton lifetimes in quantum wells. , 1987, Physical review letters.