论文信息 - 140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT

140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT

The authors report the design, fabrication, and millimeter-wave performance of 0.1- mu m T-gate pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP high electron mobility transistors (HEMTs). When tuned and biased for minimum noise, the device achieved a noise figure of 1.3 dB with 8.2-dB associated gain at 95 GHz. When tested at D-band, the device achieved a gain of 7.3 dB at 141.5 GHz. The gain at both these frequencies is the highest ever reported for InP HEMTs, and demonstrates the feasibility of this device technology for operating at frequencies beyond 100 GHz.<<ETX>>

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