论文信息 - Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors

Effective dark current suppression with asymmetric MSM photodetectors in Group IV semiconductors

We have demonstrated for the first time, with both simulations and experiments, the application of an asymmetric metal electrode scheme in Group IV metal-semiconductor-metal photodetectors (MSM-PDs) to effectively lower dark current (I/sub dark/) without sacrificing the photocurrent (I/sub photo/) substantially. A new metric was introduced by normalizing the photocurrent-to-dark current ratio to the input optical power (NPDR) to provide an objective assessment of the detector performance. Improvement of at least 1.4 times in NPDR was obtained with asymmetric MSM-PDs. Finally, the impact of MSM sizing on NPDR was also addressed.

[1] Patrick Fay,et al. InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights , 1996 .

[2] J. Soole,et al. InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications , 1991 .

[3] Gianlorenzo Masini,et al. Monolithic integration of near-infrared Ge photodetectors with Si complementary metal–oxide–semiconductor readout electronics , 2002 .

[4] Marius Grundmann,et al. Epitaxial liftoff InGaAs/InP MSM photodetectors on Si , 1995 .

[5] D. Kern,et al. Low-energy electron detection in microcolumns , 1995 .

[6] R.H. Walden,et al. A review of recent progress in InP-based optoelectronic integrated circuit receiver front-ends , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[7] K. Saraswat,et al. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric , 2002, IEEE Electron Device Letters.