Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

Well-defined metal-insulator-metal trilayered structures composed of epitaxial Pr0.7Ca0.3MnO3 insulator layers, epitaxial LaNiO3 bottom electrodes, and Al metal top electrodes were fabricated on LaAlO3 (100) substrates. The I-V characteristics of the trilayer structures show electric-field-induced resistance switching. The resistance switching ratio of the heterostructures was up to 100 when positive and negative pulsed voltages were applied. Detailed I-V analysis indicates the importance of both trap-controlled space-charge-limited current and Poole–Frenkel effect in resistance switching at Al∕Pr0.7Ca0.3MnO3 interfaces.

[1]  H. Koinuma,et al.  Modification of reflection high-energy electron diffraction system for in situ monitoring of oxide epitaxy at high oxygen pressure , 2008 .

[2]  Byung Joon Choi,et al.  Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films , 2007 .

[3]  H. Koinuma,et al.  High‐Throughput Characterization of Metal Electrode Performance for Electric‐Field‐Induced Resistance Switching in Metal/Pr0.7Ca0.3MnO3/Metal Structures , 2007 .

[4]  Wenqing Zhang,et al.  Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag/La 0.7 Ca 0.3 MnO 3 /Pt heterostructures , 2006 .

[5]  R. Waser,et al.  Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3 , 2006, Nature materials.

[6]  Hideaki Adachi,et al.  Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature , 2004 .

[7]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3 , 2004, cond-mat/0411474.

[8]  A. Sawa,et al.  Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface , 2004, cond-mat/0409657.

[9]  Q. X. Jia,et al.  Work function of the mixed-valent manganese perovskites , 2004 .

[10]  California,et al.  Field-induced resistive switching in metal-oxide interfaces , 2004, cond-mat/0402687.

[11]  A. Halabica,et al.  Degradation of LaMnO3−y surface layer in LaMnO3−y/metal interface , 2002, cond-mat/0201460.

[12]  C. Gerber,et al.  Reproducible switching effect in thin oxide films for memory applications , 2000 .

[13]  S. Q. Liu,et al.  Electric-pulse-induced reversible resistance change effect in magnetoresistive films , 2000 .

[14]  H. Michaelson.  The work function of the elements and its periodicity , 1977 .