论文信息 - A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density - 字舞流文

A versatile hot electron emitter of InGaAs/AlAs heterostructure with wide energy range at high current density

Y. Ikeda | Y. Miyamoto | K. Furuya | Bingyan Zhang | N. Kikegawa

[1] Y. Ikeda,et al. Shortening of Detection Time for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscopy , 1999 .

[2] D. Ferry,et al. Transport in Nanostructures: Preface , 1997 .

[3] T. Maruyama,et al. Detection of hot electron current with scanning hot electron microscopy , 1996 .

[4] C. Fonstad,et al. In0.53Ga0.47As/AlAs resonant tunneling diodes with peak current densities in excess of 450 kA/cm2 , 1990 .

[5] Yoshiaki Nakata,et al. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature , 1987 .

[6] T. C. Mcgill,et al. Observation of resonant tunneling through GaAs quantum well states confined by AlAs X‐point barriers , 1987 .

[7] L. Esaki,et al. Tunneling in a finite superlattice , 1973 .