Double crystal x-ray rocking curves of multiple layer structures

Interference effects in double crystal x-ray rocking curves arising from the existence of a sub-micrometre layer sandwiched between two layers of different composition are studied by simulation and experiment. For GaInAs structures on InP with a quarter micrometre middle layer, composition and thickness could be determined to an accuracy of 50 ppm and 50 AA respectively. There is an excellent consistency between interference structures and layer parameters deduced from various reflections. The sensitivity of the interference structures to other layer parameter variations is investigated.

[1]  B. Tanner,et al.  Interference peaks in double‐crystal x‐ray rocking curves of laser structures , 1986 .

[2]  W. Bartels,et al.  X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers , 1978 .

[3]  H. Okamoto,et al.  Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy , 1979 .

[4]  S. Bates,et al.  X-ray scattering from a single-quantum-well heterostructure , 1987 .

[5]  B. Tanner,et al.  Double axis X-ray diffractometry at glancing angles , 1986 .

[6]  M. H. Lyons,et al.  Simulation of X-ray double-crystal rocking curves at multiple and inhomogeneous heteroepitaxial layers , 1985 .

[7]  Krishna C. Saraswat,et al.  A Model for Dopant Incorporation into Growing Silicon Epitaxial Films I . Theory , 1979 .

[8]  B. Tanner,et al.  X-Ray Double Crystal Diffractometry of Multiple and Very Thin Heteroepitaxial Layers , 1985 .

[9]  D. W. Berreman,et al.  Dynamical x‐ray rocking curve simulations of nonuniform InGaAs and InGaAsP using Abeles’ matrix method , 1986 .

[10]  Ploog,et al.  Improved assessment of structural properties of AlxGa1-xAs/GaAs heterostructures and superlattices by double-crystal x-ray diffraction. , 1986, Physical review. B, Condensed matter.

[11]  I. Hayashi,et al.  Lattice Mismatch Study of LPE‐Grown InGaPAs on ( 001 ) ‐ InP Using X‐Ray Double‐Crystal Diffraction , 1979 .

[12]  W. D. Johnston,et al.  Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy , 1984 .