The time dependence of luminescence in solids

A review of experimental data on the time dependence of luminescent decay in solids shows very few examples of the classically expected exponential dependence and none of the bimolecular law. The prevailing long-term time dependence obeys power laws in time with exponents between -1 and -2. It is suggested that the widely applicable power-law dependence is the result of many-body interactions dominating the dynamics of charge release from trapping centres. A simple model involving either one or two sets of such trapping centres can explain most of the observed features of transient response under short excitation. A qualitative physical mechanism is proposed for the power-law response.

[1]  R. Dingle.  Radiative Lifetimes of Donor-Acceptor Pairs in p-Type Gallium Arsenide , 1969 .

[2]  K. Colbow.  Free-to-Bound and Bound-to-Bound Transitions in CdS , 1966 .

[3]  A. Jonscher.  Dielectric relaxation in solids , 1983 .

[4]  P. Debye,et al.  Long‐Lifetime Phosphorescence and the Diffusion Process , 1952 .

[5]  K. Takiyama,et al.  Effects of Radiations on the Decay Time of F‐Center Emission in LiCl , 1980 .

[6]  J. Campos,et al.  Luminescence decay of ZnS:Ag in the 10−7 to 1 s range by means of laser excitation , 1981 .

[7]  M. Kastner.  Defects in lone-pair semiconductors: The valence-alternation model and new directions , 1980 .

[8]  A. Jonscher.  A new understanding of the dielectric relaxation of solids , 1981 .

[9]  Hiroji Kawai,et al.  Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu,Al Phosphor , 1980 .

[10]  L. Dissado,et al.  The temperature dependence of relaxation processes , 1982 .

[11]  R. M. Hill,et al.  A cluster approach to the structure of imperfect materials and their relaxation spectroscopy , 1983, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.

[12]  R. Street,et al.  Theory of radiative recombination by diffusion and tunneling in amorphous Si:H , 1981 .

[13]  G. E. Thomas,et al.  Measurement of the Time Dependence of Scintillation Intensity by a Delayed‐Coincidence Method , 1961 .

[14]  A. Jonscher,et al.  The dielectric behaviour of condensed matter and its many-body interpretation , 1983 .

[15]  R. Street.  Luminescence and recombination in hydrogenated amorphous silicon , 1981 .

[16]  D. G. Thomas,et al.  Kinetics of Radiative Recombination at Randomly Distributed Donors and Acceptors , 1965 .

[17]  W. Czaja,et al.  Time resolved photoluminescence near the “band gap” in amorphous silicon , 1979 .

[18]  Y. Toyozawa,et al.  Tunneling recombination of trapped electrons and holes in KCl:AgCl and KCl:TlCl , 1974 .

[19]  A. Jonscher,et al.  Frequency-domain study of trapping dynamics in SIGaAs , 1983 .

[20]  M. Thorpe,et al.  Transverse susceptibility in spin S Ising chains , 1983 .

[21]  P. Avouris,et al.  A tunneling model for the decay of luminescence in inorganic phosphors: The case of Zn2SiO4:Mn , 1981 .