Observation of explosive crystallization during excimer laser annealing using in situ time-resolved optical reflection and transmission measurements

Abstract XeF excimer laser-induced melting and recrystallization of amorphous silicon was investigated using in situ on-line time-resolved reflection and transmission measurements with a nanosecond time resolution. Explosive crystallization was observed for 900 A thick amorphous silicon on SiO 2 deposited on non-alkali glass substrate upon 25 ns pulse duration of excimer laser by continuous-wave He-Ne probe laser. Three distinct regrowth regimes were investigated on the basis of various excimer laser fluences. Scanning electron microscopy, Raman spectroscopy and atomic force microscopy were used to evaluate the excimer laser-irradiated region of the sample. Grain size, surface roughness and melt duration as a function of various laser fluences are also determined.

[1]  Jan Siegel,et al.  Bulk solidification and recalescence phenomena in amorphous Ge films upon picosecond pulsed laser irradiation , 1996 .

[2]  W. Sinke,et al.  Evidence for a Self-Propagating Melt in Amorphous Silicon upon Pulsed-Laser Irradiation , 1984 .

[3]  David Turnbull,et al.  Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation , 1985 .

[4]  Huber,et al.  Laser-induced crystallization of amorphous GeTe: A time-resolved study. , 1987, Physical Review B (Condensed Matter).

[5]  D. Wuu,et al.  Transformation of microcrystalline silicon films by excimer-laser-induced crystallization , 2005 .

[6]  David K. Fork,et al.  Capillary waves in pulsed excimer laser crystallized amorphous silicon , 1996 .

[7]  P. Stolk,et al.  Epitaxial explosive crystallization of amorphous silicon , 1989 .

[8]  J. Tsao,et al.  Surface solidification and impurity segregation in amorphous silicon , 1986 .

[9]  C. Afonso,et al.  Reflectivity and transmission of amorphous thin films at the melting temperature , 1992 .

[10]  Michael O. Thompson,et al.  Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation , 1983 .

[11]  R. Ishihara,et al.  A combined TEM and time-resolved optical reflectivity investigation into the excimer-laser crystallization of a-Si films , 2001 .

[12]  Jin Jang,et al.  Microcrystalline silicon thin films studied using spectroscopic ellipsometry , 2002 .

[13]  J. Tsao,et al.  Evidence against surface nucleation following pulsed melting of Si , 1990 .

[14]  Stiffler,et al.  Transient nucleation following pulsed-laser melting of thin silicon films. , 1991, Physical review. B, Condensed matter.

[15]  D. Agassi.  Phenomenological model for pisosecond‐pulse laser annealing of semiconductors , 1984 .

[16]  G. Jellison,et al.  Time‐resolved ellipsometry measurements of the optical properties of silicon during pulsed excimer laser irradiation , 1985 .

[17]  Michael O. Thompson,et al.  Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films , 1993 .

[18]  R. Ishihara,et al.  Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing , 2004 .

[19]  Murakami,et al.  Explosive crystallization starting from an amorphous-silicon surface region during long pulsed-laser irradiation. , 1987, Physical review letters.

[20]  C. Grigoropoulos,et al.  In situ and ex situ diagnostics on melting and resolidification dynamics of amorphous and polycrystalline silicon thin films during excimer laser annealing , 2000 .

[21]  P. Leiderer,et al.  ON THE INTERPRETATION OF TIME-RESOLVED SURFACE REFLECTIVITY MEASUREMENTS DURING THE LASER ANNEALING OF SI THIN FILMS , 1998 .

[22]  Wood,et al.  Time-resolved reflectivity measurements on silicon and germanium using a pulsed excimer KrF laser heating beam. , 1986, Physical review. B, Condensed matter.

[23]  Michael J. Aziz,et al.  Pulsed Excimer (KrF) Laser Melting of Amorphous and Crystalline Silicon Layers , 1985 .

[24]  D. N. Mashburn,et al.  Direct measurements of the velocity and thickness of ‘‘explosively’’ propagating buried molten layers in amorphous silicon , 1986 .

[25]  Geist,et al.  Theoretical analysis of explosively propagating molten layers in pulsed-laser-irradiated a-Si. , 1986, Physical review letters.

[26]  R. Ishihara,et al.  Location Control of Large Grain Following Excimer-Laser Melting of Si Thin-Films , 1998 .

[27]  James S. Im,et al.  On the super lateral growth phenomenon observed in excimer laser-induced crystallization of thin Si films , 1994 .

[28]  G. Aichmayr,et al.  Growth mechanisms in laser crystallization and laser interference crystallization , 1998 .

[29]  Murakami,et al.  Pulsed-laser irradiated silicon studied by time-resolved x-ray absorption (90-300 eV). , 1986, Physical review letters.

[30]  J. Bruines,et al.  Direct observation of resolidification from the surface upon pulsed-laser melting of amorphous silicon , 1986 .