Reply to ‘‘Comment on ‘Negative capacitance at metal‐semiconductor interfaces’ ’’ [J. Appl. Phys. 70, 1090 (1991)]

The origin of the excess admittance at a forward‐biased Schottky diode invokes a controversy among research workers. Werner commented on our papers [J. Appl. Phys. 70, 1090 (1991)], in which he believes that the excess admittance is caused by minority‐carrier extraction at defective back contacts rather than charge capture and emission at interface states. This reply answers the questions raised by Werner et al. [Phys. Rev. Lett. 60, 53 (1988)] and points out that the minority‐carrier effect cannot account for the experimental observations.