CMOS–MEMS integration today and tomorrow

Abstract The integration of complementary metal oxide semiconductor (CMOS) and microelectromechanical systems (MEMS) can improve the performance of the MEMS, allows for smaller packages and leads to a lower packaging and instrumentation cost. Polycrystalline silicon–germanium (poly-SiGe) has already shown its potential for integrating MEMS and CMOS in a MEMS-last approach. The current state-of-the-art for poly-SiGe MEMS integration and the needs for the future will be addressed in this article. Market trends are translated into a roadmap for MEMS integration.

[1]  A. Witvrouw,et al.  Optimisation of PECVD poly-SiGe layers for MEMS post-processing on top of CMOS , 2005, The 13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05..

[2]  Self-aligned 0-level sealing of MEMS devices by a two layer thin film reflow process , 2004 .

[3]  Ann Witvrouw,et al.  Stable thin film encapsulation of acceleration sensors using polycrystalline silicon as sacrificial and encapsulation layer , 2004 .

[4]  Ann Witvrouw,et al.  Poly SiGe, a promising material for MEMS monolithic integration with the driving electronics , 2002 .

[5]  A. Witvrouw,et al.  Determination of the piezoresistivity of microcrystalline silicon-germanium and application to a pressure sensor , 2008, 2008 IEEE 21st International Conference on Micro Electro Mechanical Systems.

[6]  Ann Witvrouw,et al.  New low-stress PECVD poly-SiGe Layers for MEMS , 2003 .

[7]  K. Baert,et al.  The novel use of low temperature hydrogenated microcrystalline silicon germanium (µcSiGe , 2004 .

[8]  R. Schropp,et al.  Heterogeneous growth of microcrystalline silicon germanium , 2002 .

[9]  Y. Yazawa,et al.  Thin-film c-Si solar cells prepared by metal-induced crystallization , 2002 .

[10]  Chris Van Hoof,et al.  The Best Materials for Tiny, Clever Sensors , 2004, Science.

[11]  Tsu-Jae King,et al.  Thermal budget limits of quarter-micrometer foundry CMOS for post-processing MEMS devices , 2005, IEEE Transactions on Electron Devices.

[12]  R. Howe,et al.  Polycrystalline silicon-germanium films for integrated microsystems , 2003 .

[13]  P. De Moor,et al.  Why CMOS-integrated transducers? A review , 2000 .

[14]  Characterization of KrF excimer laser annealed PECVD SixGe1−x for MEMS post-processing , 2006 .