Multidimensional geometric modeling for 3D TCAD

Abstract This article gives an overview of our current state of the art in generating 3D geometry and doping representations for complex semiconductor devices. Focusing on the multidimensional aspects, we describe how — starting from the mask layout and the standard process representation (SPR) — the 3D device geometry and doping distribution is built by assembling simulations of different dimensionality.

[1]  Wolfgang Fichtner,et al.  Unified Grid Generation and Adaptation for Device Simulation , 1995 .

[2]  Wolfgang Fichtner,et al.  Automatic rectangle-based adaptive mesh generation without obtuse angles , 1992, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[3]  Nancy Hitschfeld.  Grid generation for three-dimensional non-rectangular semiconductor devices , 1993 .

[4]  Martti Mäntylä,et al.  Introduction to Solid Modeling , 1988 .

[5]  Wolfgang Fichtner,et al.  Reliable solid modeling for three-dimensional semiconductor process and device simulation , 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.