InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering
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Yan-Kuin Su | Shoou-Jinn Chang | S. C. Chen | Shih-Chang Shei | S. Chang | Y. Su | Y. Hsu | C. H. Liu | S. Shei | Y. C. Lin | C. S. Chang | Y. P. Hsu | U. H. Liaw | S. C. Chen | U. Liaw | C. S. Chang
[1] Takashi Mukai,et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes , 1995 .
[2] S. Jeon,et al. Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions , 2001 .
[3] Larry A. Coldren,et al. Indium tin oxide contacts to gallium nitride optoelectronic devices , 1999 .
[4] Isamu Akasaki,et al. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters , 1997 .
[5] S. Nakamura,et al. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .
[6] S.J. Chang,et al. InGaN/GaN light emitting diodes activated in O/sub 2/ ambient , 2002, IEEE Electron Device Letters.
[7] Hiroshi Harima,et al. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. , 2002 .
[8] Yan-Kuin Su,et al. InGaN-GaN multiquantum-well blue and green light-emitting diodes , 2002 .
[9] T. Tsai,et al. Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts , 2002, IEEE Photonics Technology Letters.
[10] Akio Yamamoto,et al. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1) , 2002 .
[11] J. Sheu,et al. Nitride-based cascade near white light-emitting diodes , 2002, IEEE Photonics Technology Letters.
[12] S. Nakamura,et al. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures , 1995 .
[13] M. Jou,et al. Highly reliable operation of indium tin oxide AlGaInP orange light-emitting diodes , 1994 .
[14] M. Ludowise,et al. High-efficiency InGaN MQW blue and green LEDs , 1998 .