A driving method of nonvolatile memory device using variable resistive element and the nonvolatile memory device
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Provided is an operating method for a nonvolatile memory device using a resistance material. In the operating method for a nonvolatile memory device which uses a program period including a continuous first and second program loop, a plurality of selected first write drivers program multiple resistive memory cells in the first program loop, and a plurality of selected second write drivers program multiple resistive memory cells in the second program period. A part of the first and second write drivers overlap each other.