Numerical modeling of the emission characteristics of semiconductor quantum dash materials for lasers and optical amplifiers

This paper deals with the simulation of the emission characteristics of self-assembled semiconductor quantum dash (QDash) active materials, characterized by high length-to-width and width-to-height ratios of the dash size and by a wide spreading of the dash dimensions. This significant size fluctuation requires to compute numerically the corresponding energy distribution of the electron and hole confined states. Furthermore, due to the long dash length, it is necessary to take into account the many longitudinal confined states that contribute to the emission spectrum. To implement a model that does not require excessive computation time, some simplifying assumptions have been introduced and validated numerically. Starting from good knowledge of the dash size, material composition, and optical waveguide dimensions, we have been able to simulate the amplified spontaneous emission and gain spectra of a quantum dash semiconductor optical amplifier with a good quantitative agreement with the measured data. As an application example, the model is used to predict the gain properties of different QDash ensembles having various size distributions.

[1]  Haiyu Huang,et al.  Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed , 2002 .

[2]  Hiroshi Ishikawa,et al.  Effect of homogeneous broadening of optical gain on lasing spectra in self-assembled In x Ga 1-x As/GaAs quantum dot lasers , 2000 .

[3]  Hanan Dery,et al.  Cross-gain modulation in inhomogeneously broadened gain spectra of InP-Based 1550 nm quantum dash optical amplifiers: Small-signal bandwidth dependence on wavelength detuning , 2003 .

[4]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .

[5]  D. Deppe,et al.  Rate equation model for nonequilibrium operating conditions in a self-organized quantum-dot laser , 2001 .

[6]  Peter S. Zory,et al.  Quantum well lasers , 1993 .

[7]  D. Bimberg,et al.  Quantum-dot heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  Diana L. Huffaker,et al.  Spontaneous emission and threshold characteristics of 1.3-/spl mu/m InGaAs-GaAs quantum-dot GaAs-based lasers , 1999 .

[9]  A. Forchel,et al.  Long-wavelength InP-based quantum-dash lasers , 2002, IEEE Photonics Technology Letters.

[10]  P. Bhattacharya,et al.  Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature , 2002 .

[11]  M. Sugawara.  Self-assembled InGaAs/GaAs, quantum dots , 1999 .

[12]  Johann Peter Reithmaier,et al.  InAs/InP 1550 nm quantum dash semiconductor optical amplifiers , 2002 .

[13]  A. Stintz,et al.  Room-temperature operation of InAs quantum-dash lasers on InP [001] , 2001, IEEE Photonics Technology Letters.

[14]  Omar Qasaimeh,et al.  Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers , 2003 .

[15]  Hongtao Jiang,et al.  Self-assembled semiconductor structures: electronic and optoelectronic properties , 1998 .

[16]  A. Stintz,et al.  Optical characteristics of 1.24-μm InAs quantum-dot laser diodes , 1999, IEEE Photonics Technology Letters.

[17]  John E. Bowers,et al.  Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well , 1994 .

[18]  Nikolai N. Ledentsov,et al.  Quantum dot heterostructures , 1999 .

[19]  D. Bimberg,et al.  InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure. , 1995, Physical review. B, Condensed matter.

[20]  Stephan W Koch,et al.  Physics of Optoelectronic Devices , 1995 .

[21]  Jasprit Singh,et al.  Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output , 1999 .

[22]  Yasuharu Suematsu,et al.  Handbook of semiconductor lasers and photonic integrated circuits , 1994 .

[23]  Jasprit Singh,et al.  Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots , 2000 .

[24]  N. Yokoyama,et al.  Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures , 1999 .

[25]  Mitsuru Sugawara,et al.  Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics , 1999 .

[26]  A. Stintz,et al.  150-nm tuning range in a grating-coupled external cavity quantum-dot laser , 2000, IEEE Photonics Technology Letters.

[27]  E. Towe,et al.  Quantum Dot-Size Variation and Its Impact on Emission and Absorption Characteristics: An Experimental and Theoretical Modeling Investigation , 2002 .

[28]  Levon V. Asryan,et al.  Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser , 1996 .

[29]  Irene A. Stegun,et al.  Handbook of Mathematical Functions. , 1966 .

[30]  K. Otsubo,et al.  Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-/spl mu/m emitting InGaAs quantum dots , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[31]  A. Malko,et al.  Light amplification in semiconductor nanocrystals: Quantum rods versus quantum dots , 2003 .