论文信息 - An integrated SiGe RF bandpass low noise amplifier for multi-band wireless communication applications

An integrated SiGe RF bandpass low noise amplifier for multi-band wireless communication applications

A dual-band low noise amplifier (LNA) based on IBM SiGe 0.25 /spl mu/m BiCMOS technology is presented in this paper. It is able to work simultaneously at two different frequency bands: 935 MHz-960 MHz and 1.8 GHz-2.5 GHz, which cover the communication standards of GSM900/1800, DECT, PHS, PCS, 3G mobile and the Bluetooth as well as IEEE802.11b/g (WI-FI/WI-FI5). Comparing with GaAs devices, the proposed LNA has lower cost and better integration feasibility.

Yeo Kiat Seng | Mou Shouxian | Ma Jianguo | Do Manh Anh

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