Microwave properties of suspended single-walled carbon nanotubes with a field-effect transistor configuration

In this paper, microwave transmission properties of suspended single-walled carbon nanotubes (SWCNTs) have been investigated up to 7.1 GHz with a field-effect transistor (FET) configuration by measuring the two-port S-parameters under different gate bias voltages. An open-through de-embedding method has been used to extract the intrinsic properties of CNTs. A lumped-element equivalent circuit model has been used and the values of each component have been fitted as a function of gate bias voltage.

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