论文信息 - A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling

A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling

Abstract In this paper we present a new theoretical approach in MOS modeling to derive analytical, physics-based model equations for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs. Our approach uses conformal mapping techniques to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account. The presented model consists of analytical equations in closed form and uses only physically meaningful parameters. Therefore, the results are not only useful in circuit simulators but also in calculations of scaling behavior, where planned processes can be investigated. Comparison with numerical device simulation results and measurements confirm the high accuracy of the presented model.

A. Kostka | A. Klös | A Klös | A Kostka

[1] D. Freund,et al. An analytical model of current-splitting in CMOS-compatible lateral bipolar transistors , 1993, ESSDERC '93: 23rd European solid State Device Research Conference.

[2] I. Chen,et al. A scaled 1.8 V, 0.18 /spl mu/m gate length CMOS technology: device design and reliability considerations , 1995, Proceedings of International Electron Devices Meeting.

[3] N. Arora. MOSFET Models for VLSI Circuit Simulation , 1993 .

[4] L. D. Yau,et al. A simple theory to predict the threshold voltage of short-channel IGFET's , 1974 .

[5] D. Freund,et al. Conformal mapping techniques for the analytical, two-dimensional calculation of currents in lateral bipolar transistor structures , 1996 .

[6] M. Shur,et al. Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs , 1993 .

[7] C. Hu,et al. Threshold voltage model for deep-submicrometer MOSFETs , 1993 .

[8] Ernst Weber,et al. Electromagnetic fields , 1950 .

[9] Siegfried Selberherr,et al. Simulation of Semiconductor Devices and Processes , 1994, Springer Vienna.

[10] A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s , 1995 .

[11] Ching-Yuan Wu,et al. A new simplified threshold-voltage model for n-MOSFETs with nonuniformly doped substrate and its application to MOSFET's miniaturization , 1995 .