论文信息 - Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects

Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.

[1] A. P. Yatmanov,et al. SOI/SOS MOSFET compact macromodel taking into account radiation effects , 2011 .

[2] I. A. Kharitonov,et al. SOI device parameter investigation and extraction for VLSI radiation hardness modeling with SPICE , 1994, Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures.

[3] J. Schwank. Space and military radiation effects in silicon-on-insulator devices , 1996 .

[4] Konstantin O. Petrosyants,et al. Simulation of total dose influence on analog-digital SOI/SOS CMOS circuits with EKV-RAD macromodel , 2013, East-West Design & Test Symposium (EWDTS 2013).

[5] D. G. Mavis,et al. Employing radiation hardness by design techniques with commercial integrated circuit processes , 1997, 16th DASC. AIAA/IEEE Digital Avionics Systems Conference. Reflections to the Future. Proceedings.

[6] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .