Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations

We examine multilevel (ML) resistance switching properties in a Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt matrix, in which two bipolar resistive switching elements Pt/Ta2O5−x/TiOxNy and TiN/Ta2O5−x/Pt are anti-serially and electrically connected. The ML features for the three assigned, distinguishable resistance states are clearly identified by using an I–V device operation scheme, indicating that the middle TiN and TiOxNy electrodes are crucial for adjusting ML resistance states. Experimental observations suggest that the ML switching events rely on electrically induced oxygen ion drifts at interfaces between the top/bottom Ta2O5−x and middle TiN/TiOxNy layers.

[1]  Masateru Taniguchi,et al.  Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire. , 2010, Nano letters.

[2]  M. Sung,et al.  Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks , 2010 .

[3]  Young-soo Park,et al.  Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory , 2009 .

[4]  Qiangfei Xia,et al.  Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. , 2010, Nano letters.

[5]  Ah Rahm Lee,et al.  Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiOx/TiOy frameworks due to oxygen vacancy drifts , 2011 .

[6]  J. Yang,et al.  Memristive switching mechanism for metal/oxide/metal nanodevices. , 2008, Nature nanotechnology.

[7]  R. Waser,et al.  Nanoionics-based resistive switching memories. , 2007, Nature materials.

[8]  H. Hoffmann,et al.  Diffusion barrier properties of Ti/TiN investigated by transmission electron microscopy , 1990 .

[9]  Jea-Gun Park,et al.  Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks , 2012 .

[10]  Hyung Il Park,et al.  Flexible multilevel resistive memory with controlled charge trap B- and N-doped carbon nanotubes. , 2012, Nano letters.

[11]  Shimeng Yu,et al.  Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays. , 2010, Nanotechnology.

[12]  Kinam Kim,et al.  A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. , 2011, Nature materials.

[13]  J. Han,et al.  The physiochemical properties of TiOxNy films with controlled oxygen partial pressure , 2003 .

[14]  Matthew D. Pickett,et al.  Two‐ and Three‐Terminal Resistive Switches: Nanometer‐Scale Memristors and Memistors , 2011 .

[15]  Qi Liu,et al.  Multilevel resistive switching with ionic and metallic filaments , 2009 .

[16]  Wei Wu,et al.  A hybrid nanomemristor/transistor logic circuit capable of self-programming , 2009, Proceedings of the National Academy of Sciences.

[17]  R. Waser,et al.  Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays , 2011, IEEE Electron Device Letters.

[18]  Jin Pyo Hong,et al.  TiN electrode-induced bipolar resistive switching of TiO2 thin films , 2010 .

[19]  Rainer Waser,et al.  Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.