Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking.

Silicon has recently attracted a great deal of interest as an economical platform for integrated photonics systems. Integrated photodetectors are a key component of such systems, and CMOS-compatible processes involving epitaxially grown germanium for photodetection have been demonstrated. Detector parasitic capacitance is a key limitation, which will likely worsen if techniques such as bump bonding are employed. Here we propose leveraging the complexity available in silicon photonics processes to compensate for this using a technique known as gain peaking. We predict that by simply including an inductor and capacitor in the photodetector circuit with the properly chosen values, detector bandwidths can be as much as doubled, with no undesired effects.

[1]  Rajeev J. Ram,et al.  Photonic Device Layout Within the Foundry CMOS Design Environment , 2010 .

[2]  Stephen P. Boyd,et al.  Bandwidth extension in CMOS with optimized on-chip inductors , 2000, IEEE Journal of Solid-State Circuits.

[3]  X. Le Roux,et al.  Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide , 2007, 2007 4th IEEE International Conference on Group IV Photonics.

[5]  Manfred Berroth,et al.  High bandwidth Ge p-i-n photodetector integrated on Si , 2006 .

[6]  Hiroshi Ito,et al.  InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth , 2000 .

[7]  Ying Zhang,et al.  CMOS-integrated high-speed MSM germanium waveguide photodetector. , 2010, Optics express.

[8]  M. Watts,et al.  Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current. , 2011, Optics express.

[9]  M. Lipson,et al.  Ultra-low capacitance and high speed germanium photodetectors on silicon. , 2009, Optics express.

[10]  Michael Hochberg,et al.  Towards fabless silicon photonics , 2010 .

[11]  Katsuyoshi Washio,et al.  A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications , 2000 .

[12]  M. Lipson,et al.  High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. , 2008, Optics express.

[13]  James G. Mitchell,et al.  Flip-chip integrated silicon photonic bridge chips for sub-picojoule per bit optical links , 2010, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC).

[14]  Cary Gunn,et al.  CMOS Photonics for High-Speed Interconnects , 2006, IEEE Micro.

[15]  M. Kawai,et al.  Advanced LiNbO/sub 3/ optical modulators for broadband optical communications , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[16]  B. Jalali,et al.  Silicon Photonics , 2006, Journal of Lightwave Technology.

[17]  M. Morse,et al.  31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate. , 2007, Optics express.

[18]  D.J. Allstot,et al.  Bandwidth Extension Techniques for CMOS Amplifiers , 2006, IEEE Journal of Solid-State Circuits.

[19]  N. Feng,et al.  36 GHz submicron silicon waveguide germanium photodetector. , 2011, Optics express.

[20]  N. Feng,et al.  Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides. , 2010, Optics express.

[21]  R. Soref,et al.  The Past, Present, and Future of Silicon Photonics , 2006, IEEE Journal of Selected Topics in Quantum Electronics.

[22]  Lun-Lun Chen,et al.  MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient , 2012, IEEE Electron Device Letters.

[23]  T Pinguet,et al.  A Grating-Coupler-Enabled CMOS Photonics Platform , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[24]  Performance of Ge/Si receivers at 1310 nm , 2009 .