A 1-MHz ZVS Boost DC-DC converter with active clamping using GaN power transistors

This paper proposes a zero voltage switching (ZVS) Boost converter based on the active clamping technique. The auxiliary ZVS cell and dead-time control are developed to minimize the switching loss and the body-diode recovery loss of the Boost converter. By using the wide-band-gap semiconductors (GaN) device, we enhance the efficiency further when it works in a high frequency. Therefore, A 1MHz 300V ZVS Boost converter with an output power of 400W is presented in detail to verify the analysis. The efficiency of the proposed ZVS Boost converter is improved 3% compared to hard switching converter.

[1]  Fred C. Lee,et al.  Evaluation and application of 600V GaN HEMT in cascode structure , 2013, 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[2]  Xinke Wu,et al.  Analysis and Derivations for a Family ZVS Converter Based on a New Active Clamp ZVS Cell , 2008, IEEE Transactions on Industrial Electronics.

[3]  K. Sheng.  Deadtime Effect on GaN-Based Synchronous Boost Converter and Analytical Model for Optimal Deadtime Selection , 2016 .

[4]  Leon M. Tolbert,et al.  Wide bandgap power devices based high efficiency power converters for data center application , 2014, 2014 IEEE Workshop on Wide Bandgap Power Devices and Applications.

[5]  Lin Cong,et al.  A 130 W 95%-efficiency 1 MHz non-isolated boost converter using PWM zero-voltage switching and enhancement-mode GaN FETs , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[6]  F. Lee,et al.  Characterization and Enhancement of High-Voltage Cascode GaN Devices , 2015, IEEE Transactions on Electron Devices.

[7]  Fred C. Lee,et al.  Design and evaluation of GaN-based dual-phase interleaved MHz critical mode PFC converter , 2014, 2014 IEEE Energy Conversion Congress and Exposition (ECCE).

[8]  Pengcheng Xu,et al.  Optimization and comparison of continuous and discontinuous Current Source Drivers for MHz boost PFC converters , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[9]  F. Lee,et al.  Evaluation and Application of 600 V GaN HEMT in Cascode Structure , 2014, IEEE Transactions on Power Electronics.

[10]  Karim S. Boutros,et al.  A 95% Efficient Normally-Off GaN-on-Si HEMT Hybrid-IC Boost-Converter with 425-W Output Power at 1 MHz , 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[11]  Radoslava Mitova,et al.  Investigations of 600-V GaN HEMT and GaN Diode for Power Converter Applications , 2014, IEEE Transactions on Power Electronics.

[12]  Hoi Lee,et al.  A 99%-efficiency 1-MHz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers , 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

[13]  S. Decoutere,et al.  A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si , 2011, IEEE Electron Device Letters.

[14]  1-MHz isolated bipolar half-bridge GaN gate driver for SiC MOSFETs , 2015, 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia).