论文信息 - 33.4: Distinguished Student Paper: An LTPS Active‐Matrix Process without Ion Doping

33.4: Distinguished Student Paper: An LTPS Active‐Matrix Process without Ion Doping

A low temperature poly‐silicon active matrix process without the need for ion implantation to dope drain and source areas of TFTs has been developed. A doped silicon layer is deposited by PECVD and structured prior to the deposition of the intrinsic silicon for the channel. The dopant is diffused and activated within the excimer laser crystallization step. N‐channel test TFTs with different geometries and a 4 inch quarter‐VGA AMLCD were realized. The TFT properties (mobility, on/off ratio, saturation, etc.) are suitable to realize AMLCDs, AMOLED displays and to integrate driver electronics on the displays. The substitution of ion doping by PECVD deposition overcomes a major limitation for panel sizes in poly‐Si technology and avoids large investment costs for ion implantation equipment.

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