Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers

Recently, amorphous oxide semiconductors (AOSs) have extensively been studied for applications as display devices because AOSs have many advantages over conventional amorphous and polycrystalline silicon that are used for the channel layers of thin-fi lm transistors (TFTs). [ 1 ] As a representative AOS material, amorphous gallium-indium-zinc-oxide (a-GIZO) has intensively been studied as an active layer of TFTs for switching/driving devices in active-matrix liquid crystal display (AMLCD) and active-matrix organic light-emitting diode display (AMOLED) backplanes [ 2–5 ] because of its advantages, such as a good short-range uniformity, a high fi eld-effect mobility ( μ FE ), a large area uniform integration, a low cost and low temperature fabrication process, transparency, etc. Therefore, AOSs can be used in novel application areas, including transparent and/ or fl exible electronic devices. Up until now, many prototype active-matrix displays have been demonstrated, including 12.1 inch wide extended graphics array (WXGA) OLED displays, [ 2 ]

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