Analytical approach to breakdown voltages in thin-film SOI power MOSFETs

Abstract The breakdown voltage behavior of thin-film SOI power MOSFETs is described using an analytical approach. Simple expressions for the vertical and horizontal characteristics of the device are developed one-dimensionally to analytically predict the critical impurity concentration of the drift region and the breakdown voltages. Using this modeling, the effect of device parameters is also examined. The validity of the analytical expressions is demonstrated by comparison with the extensive results of numerical simulations.