Gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO3 and Pb(Zr0.52Ti0.48)O3 thin films

Abstract We investigated gamma-ray irradiation effects on electrical properties of ferroelectric PbTiO 3 (PTO) and Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) thin films. PTO and PZT thin films were prepared on the Pt/Ti/SiO 2 /Si substrates by using a sol–gel method with a spin-coating process. The prepared PTO and PZT thin films were subjected to gamma radiation with various total doses from 0 kGy to 300 kGy. There were no noticeable morphological and structural changes in PTO and PZT films before and after irradiation. As a total dose increases up to 300 kGy, a larger degradation behavior of electrical properties was observed in the PZT films rather than in the PTO films. About 35% of remanent polarization value decreased for the PZT films, while just 10% of that decreased for the PTO films. Dielectric constant of PZT films decreased much from 850 to 580, but that of the PTO films decreased just a little from 400 to 340. This degradation behavior of polarization and dielectric properties can be explained by the pinning of domain walls by some radiation-induced defects. These results suggest that the PTO films have higher radiation hardness properties than the PZT films.

[1]  James F. Scott,et al.  Radiation effects on ferroelectric thin‐film memories: Retention failure mechanisms , 1989 .

[2]  L. Goux,et al.  Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays , 2006 .

[3]  U. Waghmare,et al.  Multiferroic properties of nanocrystalline BaTiO3 , 2008, 0809.1835.

[4]  Chenglu Lin,et al.  γ-Ray Total Dose Radiation Effects of Pt/PbZr0.52Ti0.48/Pt and Au/PbTiO3/YBa2Cu3O7-δ Ferroelectric Capacitors , 1998 .

[5]  G. Brennecka,et al.  Neutron irradiation effects on domain wall mobility and reversibility in lead zirconate titanate thin films , 2013 .

[6]  Randall A Moore,et al.  The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors , 1990 .

[7]  Sang Mo Yang,et al.  Ferroelectricity in highly ordered arrays of ultra-thin-walled Pb(Zr,Ti)O3 nanotubes composed of nanometer-sized perovskite crystallites. , 2008, Nano letters.

[8]  R. L. Pease,et al.  Hardness-assurance and testing issues for bipolar/BiCMOS devices , 1993 .

[9]  J. Wust,et al.  The stability of ferroelectric polarization of PVDF upon irradiation , 2000 .

[10]  Dunbar P. Birnie,et al.  Total-dose radiation effects on sol-gel derived PZT thin films , 1992 .

[11]  Yichun Zhou,et al.  Polarization loss and leakage current reduction in Au/Bi3.15Nd0.85Ti3O12/Pt capacitors induced by electron radiation , 2009 .

[12]  Yichun Zhou,et al.  Drastic reduction of leakage current in ferroelectric Bi3.15Nd0.85Ti3O12 films by ionizing radiation , 2011 .

[13]  K. Amanuma,et al.  Fatigue Characteristics of Sol-Gel Derived Pb(Zr, Ti)O3 Thin Films , 1994 .

[14]  B. Liu,et al.  Neutron radiation effects in Bi 3.15Nd 0.85Ti 3O 12 ferroelectric thin film capacitors , 2013 .

[15]  Sun A Yang,et al.  Distribution of pyrochlore phase in Pb(Mg1/3Nb2/3)O3-PbTiO3 films and suppression with a Pb(Zr0.52Ti0.48)O3 interfacial layer , 2012 .